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AM80912-030
RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS
.REFRACTORY/ .EMI .15: .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY RF THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 30 W MIN. WITH 7.8 dB GAIN
.400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM80912-030 BRANDING 80912-30
PIN CONNECTION
The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM80912-030 is supplied in the hermetic metal/ceramic package with internal input matching structures.
1. Collector 2. Base 3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25C)
Symbol Parameter Value Unit
PDISS IC VCC TJ T STG
Power Dissipation* Collector Current*
(TC 85 C)
75 3.5 40 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.2 C/W
*Applies only to rated RF amplifier operation.
August 1992
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AM80912-030
ELECTRICAL SPECIFICATIONS (T case = 25C) STATIC
Value Symbol Test Conditions Min . Typ. Max. Unit
BV CBO BV EBO BV CER ICES hFE DYNAMIC
IC = 10mA IE = 1mA IC = 20mA VCE = 35V VCE = 5V IC = 1.0A RBE = 10
55 3.5 55 -- 15
-- -- -- -- --
-- -- -- 5.0 150
V V V mA --
Value Symbol Test Conditions Min . Typ. Max. Unit
POUT
f = 960 -- 1215MHz f = 960 -- 1215MHz f = 960 -- 1215MHz 6.4 s on 6. 6 s
PIN = 5.0W PIN = 5.0W PIN = 5.0W
VCC = +35V VCC = +35V VCC = +35V
30 40 7.8
36 45 8.6
-- -- --
W % dB
C
GP
Note:
Pul se format: Duty Cycle:
off, repeat f or 3.3 ms, then off for 4.5125 ms. Burst 49.2%, overall 20.8%
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AM80912-030
TYPICAL PERFORMANCE TYPICAL RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY* vs COLLECTOR VOLTAGE
TYPICAL BROADBAND POWER AMPLIFIER
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
DC = 20% jc (C/W)
DC = 4%
PIN = 5 W VCC = 35 V TC = 40C
PULSE WIDTH (sec)
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AM80912-030
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
ZIN
PIN = 5W VCC = +35V ZO* = 50
FREQ. L = 960 MHz M = 1090 MHz H = 1215 MHz
ZIN () 4.5 + j 6.0 5.5 + j 6.3 5.0 + j 5.0
ZCL () 11.0 - j 0.5 12.0 - j 2.0 12.5 - j 5.0
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
PIN = 5W VCC = +35V ZO* = 50
*Normalized Impedance
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AM80912-030
TEST CIRCUIT
PACKAGE MECHANICAL DATA
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AM80912-030
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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